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triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 1 TGA2512 may 2009 ? rev - -40 -30 -20 -10 0 10 20 30 40 5 6 7 8 9 101112131415 frequency (ghz) s-parameter (db) key features ? typical frequency range: 5 - 15 ghz ? 1.4 db nominal noise figure ? 27 db nominal gain ? bias: 5 v, 160 ma gate bias 5 v, 90 ma self bias ? 0.15 um 3mi phemt technology ? chip dimensions 2. 05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) primary applications ? x-band radar ? ew, ecm ? point-to-point radio measured fixtured data bias conditions: gate bias vd = 5 v, id = 160 ma irl gain orl 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 101112131415 frequency (ghz) noise figure (db) product description the triquint TGA2512 is a wideband lna with agc amplifier for ew, ecm, and radar receiver or driver amplifier applications. offering high gain 27db typical from 5-15ghz, the TGA2512 provides excellent noise performance with typical midband nf 1.4db, while the balanced topology offers good return loss typically 15db. the TGA2512 is designed for maximum ease of use. the large input fets can handle up to 21dbm input power reliably, while the build-in gain control provides 15db of typical gain control range. the part is also assembled in self-biased mode, using a single +5v supply connection from either side of the chip, or in gate biased mode, allowing the user to control the current for a particular applications. in self-biased mode the TGA2512 offers 6dbm typical p1db, while in gate-biased mode the typical p1db is over 13dbm. the small size of 2.46mm 2 allows ease of compaction into multi- chip-modules (mcms). the TGA2512 is 100% dc and rf tested on- wafer to ensure performance compliance. lead-free & rohs compliant. x band low noise amplifier datasheet subject to change without notice
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 2 TGA2512 may 2009 ? rev - table i maximum ratings 1 / symbol parameter value notes vd drain voltage [3.5 + (0.0125)(id)] v 2 / 3 / vg gate voltage range -1 to +0.5 v id drain current (gate biased) 240 ma 2 / 4 / ? ig ? gate current 7.04 ma 4 / p in input continuous wave power 21 dbm p d power dissipation 1.56 w 2 / 5 / t ch operating channel temperature 200 c 6 / 7 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current , input power, and output power shall not exceed p d . 3 / unit for id is ma 4 / total current for the entire mmic. 5 / when operated at this bias condition with a base plate temperature of 70 c, the median life is 3.4e5. 6 / junction operating temperature will directly affect the device median time to failure (tm). for maximu m life, it is recommended that junction temperatures be maintained at the lowest possible levels. 7 / these ratings apply to each individual fet. table ii dc probe tests (ta = 25 c, nominal) symbol parameter min. typ. max. units v bvgs, q1 breakdown voltage gate-source -30 -5 v v p, q1,2,4,5,6 pinch-off voltage -0.7 -0.1 v q1, q4, q5 are 400 um fets. q2, q6 are 300 um fets.
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 3 TGA2512 may 2009 ? rev - table iii electrical characteristics (ta = 25 0 c nominal) parameter gate bias self bias units frequency range 5 - 15 5 - 15 ghz drain voltage, vd 5.0 5.0 v drain current, id 160 90 ma gate voltage, vg -0.1 - v small signal gain, s21 27 24 db input return loss, s11 15 15 db output return loss, s22 20 20 db noise figure, nf 1.4 1.4 db output power @ 1db gain compression, p1db 13 6 dbm oip3 24 16 dbm
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 4 TGA2512 may 2009 ? rev - table iv thermal information parameter test conditions t ch ( c) jc ( c/w) t m (hrs) jc thermal resistance (channel to case) vd = 5 v id = 160 ma gate bias pdiss = 0.80 w 100 37.6 5.8e+6 jc thermal resistance (channel to case) vd = 5 v id = 90 ma self bias pdiss = 0.45 w 82.7 28.2 4.1e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 5 TGA2512 may 2009 ? rev - measured fixtured data bias conditions: gate bias vd = 5 v, id = 160 ma 14 16 18 20 22 24 26 28 30 32 34 4 5 6 7 8 9 101112131415161718 frequency (ghz) gain (db) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) noise figure (db)
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 6 TGA2512 may 2009 ? rev - -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 456789101112131415161718 frequency (ghz) input return loss (db) measured fixtured data bias conditions: gate bias vd = 5 v, id = 160 ma -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 456789101112131415161718 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 7 TGA2512 may 2009 ? rev - measured fixtured data bias conditions: gate bias vd = 5 v, id = 160 ma 0 2 4 6 8 10 12 14 16 6 7 8 9 10 11 12 13 14 15 16 frequency (ghz) p1db (dbm) 8 10 12 14 16 18 20 22 24 26 28 6 7 8 9 10 11 12 13 frequency (ghz) oip3 (dbm)
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 8 TGA2512 may 2009 ? rev - 0 5 10 15 20 25 30 35 2 4 6 8 10 12 14 16 18 20 frequency (ghz) gain over temperature (db) -40c +25c +70c measured fixtured data bias conditions: gate bias vd = 5 v, id = 160 ma over temperature
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 9 TGA2512 may 2009 ? rev - measured fixtured data bias conditions: self bias vd = 5 v, id = 90 ma 14 16 18 20 22 24 26 28 30 32 34 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) gain (db) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) noise figure (db)
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 10 TGA2512 may 2009 ? rev - -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 4 5 6 7 8 9 101112131415161718 frequency (ghz) input return loss (db) measured fixtured data bias conditions: self bias vd = 5 v, id = 90 ma -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 4 5 6 7 8 9 101112131415161718 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 11 TGA2512 may 2009 ? rev - measured fixtured data bias conditions: self bias vd = 5 v, id = 90 ma 0 2 4 6 8 10 12 14 16 6 7 8 9 10 11 12 13 14 15 16 frequency (ghz) p1db (dbm) 8 10 12 14 16 18 20 22 24 26 28 6 7 8 9 10 11 12 13 frequency (ghz) oip3 (dbm)
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 12 TGA2512 may 2009 ? rev - measured fixtured data bias conditions: self bias vd = 5 v, id = 90 ma over temperature 0 5 10 15 20 25 30 2468101214161820 frequency (ghz) gain over temperature (db) -40c +25c +70c
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 13 TGA2512 may 2009 ? rev - 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 frequency (ghz) gain (db) vctrl=0 v vctrl=3v vctrl=3.2v vctrl=3.5v vctrl=4 v vctrl=5 v vctrl=6v measured fixtured data self biased variation over vctrl 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 4 6 8 10 12 14 16 18 frequency (ghz) noise figure (db) vctrl=0v vctrl=2v vctrl=2.25v vctrl=2.5v vctrl=2.75v vctrl=3v vctrl=3.5v vctrl=4v vctrl=5v
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 14 TGA2512 may 2009 ? rev - mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 0 0 1.086 (0.043) 1.327 (0.052) 1.675 (0.060) 1.955 (0.077) 2.050 (0.081) 0.145 (0.006) 1.105 (0.044) 1.755 (0.069) 1.327 (0.052) 1.086 (0.043) 0.095 (0.004) 1.200 (0.047) 0.145 (0.006) 0.095 (0.004) units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is back side of mmic bond pad #1 bond pad #2, 3, 8, 12, 13 bond pad #4, 11 bond pad #5, 10 bond pad #6, 9 (rf in) (vs) (vg) (vctrl) (vd) 0.100 x 0.200 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 (0.004 x 0.008) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.004) 6 7 8 9 10 11 12 13 (0.004 x 0.008) bond pad #7 (rf out) 0.100 x 0.200 ne rc rc b b 0.642 (0.025) 0.914 (0.036) 0.642 (0.025) 0.914 (0.036) 1.815 (0.072) 1 2 3 4 5
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 15 TGA2512 may 2009 ? rev - recommended chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. option 1: self bias - no gain control all dc connections may be brought in from either side of the chip (use pad 6 or 9) 0.01uf external cap is recommended on drain bias: vd = 5v (id = ~90ma) 100pf rf in rf out vd
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 16 TGA2512 may 2009 ? rev - option 2: self bias - with gain control recommended chip assembly diagram (con?t) all dc connections may be brought in from either si de of the chip (use pad 5 or 10, and pad 6 or 9) 0.01uf external caps are recommended on drain line bias: vd = 5v (id = ~90ma), vctrl = 0 to +5v for gain adjustment 100pf 100pf vctrl vd rf in rf out
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 17 TGA2512 may 2009 ? rev - option 3: gate bias - with gain control recommended chip assembly diagram (con?t) all dc connections may be brought in from either side of the chip (use pad 4 or 11, pad 5 or 10, and pad 6 or 9) 0.01uf external caps are recommended on drain, gate line, 10 ohm external series r between 100pf cap and 0.01uf cap is recommended for gate line source connections (pad 2, 3, 8, 12, 13) are bonded to ground. all five bond wires are required for stability. bias: vd = 5v , vctrl = 0 to +5v for gain adjustment vg = range, -0.5 to 0, typically ~ -0.1 will provide ~160ma of id. vctrl vd 100pf 100pf 100pf vg rf in rf out
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 18 TGA2512 may 2009 ? rev - equivalent dc schematic
triquint semiconductor texas: phone ( 972)994-8465 fax (972)994-8504 email: info-mmw@t qs.com web: www.triquint.com 19 TGA2512 may 2009 ? rev - assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c.

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